Orbitals and Energies #
Note – these are listed in BINDING ENERGY
Y 3d ≈ 156 eV
Y 3s ≈ 395 eV
Y 3p ≈ 302 eV
Y 4s ≈ 46 eV
Y 4p ≈ 26 eV
Theory and Background #
Yttrium exhibits a classic spin-orbit doublet, with no extraordinary concerns regarding photoemission.
Experimental Advice #
If analysing Yttrium and Gallium containing materials, such as YSGG, or AlYN + GaN semiconductors – take care of the Y 3d – Ga 3s overlap and record the Y 3p region also. Ga 3s overlaps directly with Y 3d5/2 – however given the small doublet separation of Y 3d it may be difficult to properly deconvolute this overlap – particularly in the case of multiple oxidation states of Y or Ga.
Data Analysis Guidance #
Y 3d for oxides is fit well with a LA(1.53,253) lineshape.
References #
- Mongstad, Trygve, et al. “The electronic state of thin films of yttrium, yttrium hydrides and yttrium oxide.” Solar energy materials and solar cells 128 (2014): 270-274. Read it online here.
