Thallium

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Thallium

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Orbitals and Energies #

Note – these are listed in BINDING ENERGY

 

Tl 4s ≈ 850 eV

Tl 4p ≈ 615 eV

Tl 4d ≈ 390 eV

Tl 5s ≈ 135 eV

Tl 4f ≈ 118 eV

Tl 5p ≈ 75 eV

Tl 5d ≈ 13 eV

Doublet Separations #

Tl 4f = 4.5 eV

Common Overlaps for Tl 4f #

Al 2s – Bi 5p – Nd 4d – Hg 5s – Cu 3s – Pm 4d – Ge 3p – I 4p – Rn 5p – Ge 3p

Auger Energies #

Note – these are listed in KINETIC ENERGY

 

Tl NOO ≈ 84 eV

Common Binding Energies – Tl 4f #

Species #

B.E. / eV #

Charge Ref #

Reference #

Tl (I)

118.6

C 1s (284.6 eV)

Tl (III)

117.4

C 1s (284.6 eV)

Theory and Background #

The ground state of thallium is [Xe] 6s2 4f14 5d10 6p1 – and upon singular ionisation, the 6s2 electrons act as inert Sidgwick pairs (two electrons in the outermost atomic s-orbital of heavier p-block elements to remain unshared or un-ionized in chemical compounds. Because these s-electrons are held more tightly by the nucleus due to poor shielding by intervening d and f electrons, they tend not to participate in bonding), instead of metallic free electrons after the removal of the 6p1 electron.

This results in a higher binding energy for the Tl (I) state, compared to the Tl (III) state.[1]

Experimental Advice #

There have been few studies of thallium by XPS, and not much is known about specific experimental considerations

Data Analysis Guidance #

Thallium can form a negatively charged state, to produce peaks at lower energies then elemental thallium. [1]

Reference Datasets #

 

Coming soon

References #

1. Young, K. H., et al. “XPS study of thallium oxidation states in precursor TlBaCaCuO HTSC thin films.” Applied surface science 52.1-2 (1991): 85-89.