Tantalum #
Orbitals and Energies #
Note – these are listed in BINDING ENERGY
Ta 4f ≈ 22 eV
Ta 4s ≈ 566
Ta 4p ≈ 405 eV
Ta 4d ≈ 205 eV
Ta 5s ≈ 71 eV
Ta 5p ≈ 37 eV
Ta 5d ≈ 6 eV
Common Overlaps for Ta 4f #
There are many potential overlaps at such a low energy, but the main 2 to be aware of are O 2s and F 2s
Common Binding Energies – Ta 4f #
Theory and Background #
Tantalum (Ta) is highly valued for its exceptional corrosion resistance, high melting point, and biocompatibility, making it an essential material in various industries. Its remarkable resistance to oxidation and chemical attack, even in highly aggressive environments, makes it ideal for chemical processing equipment, heat exchangers, and aerospace components. Tantalum’s high conductivity and stability also make it crucial in the production of electronic capacitors used in mobile phones, computers, and automotive electronics. Due to its biocompatibility, tantalum is widely used in medical implants, such as orthopedic and dental applications, where it promotes bone integration. Additionally, its ability to form a stable oxide layer (Ta₂O₅) enhances its performance in thin-film coatings, superconductors, and optical applications. Tantalum XPS analysis is traditionally performed on the 4f region due to the high intensity and readily resolved peaks. Ta 4f presents a typical f-orbital doublet shape with tantalum oxide and sub-oxides appearing at well separated intervals.
Experimental Advice #
Tantalum 4f lies very close to the Ta 5s feature, and both should be collected in order to properly assess the background (up to ~ 40 eV). Tantalum oxide degrades quickly under ion beam etching to form many suboxides.[1]
Data Analysis Guidance #
Tantalum metal should be fit with an asymmetric lineshape. LF(0.6,2.4,55,75) works well in our model below. Oxide peaks should be LA(1.53,243) or similar, recommended to lock FWHM of all oxides to the same value for consistency.
References #
- Islam, M. J., et al. (2020). “The effect of metal precursor on copper phase dispersion and nanoparticle formation for the catalytic transformations of furfural.” Applied Catalysis B: Environmental: 119062. Read it online here.
- Miller, A. and G. Simmons (1993). “Copper by XPS.” Surface Science Spectra 2(1): 55-60. Read it online here.
- Vasquez, R. (1998). “Cu2O by XPS.” Surface Science Spectra 5(4): 257-261. Read it online here.
- Vasquez, R. (1998). “CuO by XPS.” Surface Science Spectra 5(4): 262-266. Read it online here.
- Biesinger, M. C. (2017). “Advanced analysis of copper X‐ray photoelectron spectra.” Surface and interface analysis 49(13): 1325-1334. Read it online here.
- Thøgersen, A., et al. (2008). “An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films.” Journal of Applied Physics 103(2): 024308. Read it online here.
- Moretti, G. (1998). “Auger parameter and Wagner plot in the characterization of chemical states by X-ray photoelectron spectroscopy: a review.” Journal of Electron Spectroscopy and Related Phenomena 95(2-3): 95-144. Read it online here.
- Batista, J., et al. (2001). “On the structural characteristics of γ-alumina-supported Pd–Cu bimetallic catalysts.” Applied Catalysis A: General 217(1-2): 55-68. Read it online here.
- Ghijsen, Jacques, et al. “Electronic structure of Cu 2 O and CuO.” Physical Review B 38.16 (1988): 11322. Read it online here.
