
Silicon #
Orbitals and Energies #
Note – these are listed in BINDING ENERGY
Si 2p ≈ 100 eV
Si 2s ≈ 150 eV
Si 1s ≈ 1840 eV (HAXPES)
Doublet Separations #
Si 2p = 0.6 eV
Common Overlaps for Si 2p #
Fe 3s – Ag 4s – Co 3s – La 4d – Sb 4p – Hg 4f – Pt 5s – Ga 3p – U 5d – Po 5p – Br LMM (Al Ka X-rays) – Al KLL (Al Ka X-rays)
Theory and Background #
Silicon is extensively studied by XPS due it’s effectiveness as a substrate and the versatility of the oxide as a catalyst support. The 2p region is the major emission where there is a small doublet separation (0.6 eV) and the oxidised form of silicon may exhibit a larger FWHM than that of the elemental form. Silicon 2s peaks are also relatively large, and may be of use where Si 2p overlaps with another emission.
Experimental Advice #
Silicon has extensive plasmon structure, and it may be helpful to record both emissions in one sweep to help with backgrounds for overlapping elements, particularly those at low concentration, or with weak emissions, such as boron.
Data Analysis Guidance #
Due to the small spin-orbit splitting (0.6 eV), and the breadth of oxidic peaks, it is not uncommon to fit only a single peak for oxide / native oxide layers for Si 2p.
References #
- Data acquired by HarwellXPS
- Jensen, D. S., et al. (2013). “Silicon (100)/SiO2 by XPS.” Surface Science Spectra 20(1): 36-42. Read it online here.
- Miyoshi, K. and D. H. Buckley (1982). “XPS, AES and friction studies of single-crystal silicon carbide.” Applications of Surface Science 10(3): 357-376.. Read it online here.






