
Peak Intensity in XPS #
The equation for peak intensity in XPS is given by:
I = n.σ.T.λ.A.e-d/λ
Where:
I = measured peak intensity (area under peak)
n = atomic concentration (number of emitting atoms)
σ = photoionisation cross section of orbital
T = instrument transmission function
λ = Inelastic mean free path (IMFP)
A = Illuminated sample area and collection solid angle
d = effective depth of analysis
In XPS fitting, we make use of relative sensitivity factors to quickly and easily calculate atomic percentages from peak intensities in our spectra.
Where:
At% = I / RSF
This allows us to perform quick and easy integrations and chemical composition measurements.
The component A in the aforementioned equation related to instrument specific geometric factors.
Geometric factors in X-ray photoelectron spectroscopy (XPS) refer to how the spatial arrangement and angles between the sample, X-ray source, and electron analyser influence the measured photoelectron intensity. These factors are crucial for both maximizing signal and ensuring accurate quantification.
Key geometric factors include:
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Take-off angle: The angle between the sample surface and the path to the analyser. Changing this angle affects the escape depth of detected electrons and thus the surface sensitivity of the measurement. A smaller take-off angle increases surface sensitivity but reduces overall intensity.
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X-ray incidence angle: The angle at which X-rays strike the sample can change the photoelectron yield; a grazing incidence can increase signal from the surface layers.
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Analyzer solid angle and collection area: The sizes of the area from which electrons are collected and the acceptance angle of the analyser influence how much of the emitted photoelectron flux is detected.
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Distance between sample, source, and detector: Shorter distances increase collection efficiency but may also introduce more geometric shading or non-uniformity effects.