Orbitals and Energies #
Note – these are listed in BINDING ENERGY
Hf 4f ≈ 14 eV
Hf 4s ≈ 538 eV
Hf 4p ≈ 380 eV
Hf 4d ≈ 215 eV
Hf 5s ≈ 62 eV
Hf 5p ≈ 30 eV
Hf 5d ≈ 7 eV
Common Overlaps for Hf 4f #
Due to the low binding energy, there are many many overlaps in this region
Theory and Background #
Hafnium does not display any unusual characteristics in it’s XPS emissions.
Experimental Advice #
Hf 4s overlaps with O 1s so ensure a wide enough window is taken to account for this.
Hafnium oxide reduces under Ar sputtering.
Data Analysis Guidance #
Hf metal reports slightly asymmetric peaks, and an appropriate lineshape should be chosen.
References #
1. Miller, R. L., S. H. McKinney, and A. R. Chourasia. “Core level XPS of elemental hafnium and hafnium dioxide.” Surface Science Spectra 15.1 (2008): 59-69.
2. Engelhard, Mark, et al. “As-received, ozone cleaned and Ar+ sputtered surfaces of hafnium oxide grown by atomic layer deposition and studied by XPS.” Surface Science Spectra 18.1 (2011): 46-57.
