
Germanium #
Orbitals and Energies #
Note – these are listed in BINDING ENERGY
Ge 2p ≈ 1215 eV
Ge 3p ≈ 122 eV
Ge 3d ≈ 39 eV
Ge 4p ≈ 3 eV
Theory and Background #
Germanium core levels such as Ge 3d and Ge 2p show spin-orbit splitting and binding energy shifts that are sensitive to chemical states (elemental Ge vs oxides like GeO2).
Shake-up and shake-off effects can occur but are less prominent than for some transition metals; however, plasmon loss features and inelastic energy losses can appear as satellites or background contributions.
Chemical shifts in binding energy reflect oxidation states, with oxide peaks typically shifted by ~3.0 eV higher binding energy relative to elemental Ge.
Ge XPS can reveal band bending and interface states caused by oxides, as well as the presence of carbides or suboxides at interfaces.
Two accessible core lines (3d vs 2p) at such wildly different binding energies allows simple depth information from your spectra due to the different IMFP.
Experimental Advice #
XPS spectra of germanium oxides may show changes upon Ar ion etching, revealing lower oxidation states and interface components.[1]
Data Analysis Guidance #
The Ge 3d peaks suffer many overlaps, and in complex materials may be difficult to deconvolute.
References #
- Tabet, N., et al. “High resolution XPS study of oxide layers grown on Ge substrates.” Surface science 523.1-2 (2003): 68-72.Read it online here.




