Silicon is extensively studied by XPS due it’s effectiveness as a substrate and the versatility of the oxide as a catalyst support. The 2p region is the major emission where there is a small doublet separation (0.6 eV) and the oxidised form of silicon may exhibit a larger FWHM than that of the elemental form (Figure 1).
Silicon species exhibit marked differences in binding energy, rendering deconvolution a relatively trivial task. A range of common binding energies may be found in Table 1.
|Species||Binding energy / eV||Charge ref.||Ref.|
|Si||99.5||Au 4f / 83.94||2|
|SiO2||103.5||Au 4f / 83.94||2|
|SiC||100.5||Au 4f / 83.8||3|
Silicon 2s peaks are also relatively large, and may be of use where Si 2p overlaps with another emission (Figure 2).
- Data acquired by HarwellXPS
- Jensen, D. S., et al. (2013). “Silicon (100)/SiO2 by XPS.” Surface Science Spectra 20(1): 36-42. Read it online here.
- Miyoshi, K. and D. H. Buckley (1982). “XPS, AES and friction studies of single-crystal silicon carbide.” Applications of Surface Science 10(3): 357-376.. Read it online here.