Silicon is extensively studied by XPS due it’s effectiveness as a substrate and the versatility of the oxide as a catalyst support. The 2p region is the major emission where there is a small doublet separation (0.6 eV) and the oxidised form of silicon may exhibit a larger FWHM than that of the elemental form (Figure 1).
Silicon species exhibit marked differences in binding energy, rendering deconvolution a relatively trivial task. A range of common binding energies may be found in Table 1.
| Species | Binding energy / eV | Charge ref. | Ref. |
| Si | 99.5 | Au 4f / 83.94 | 2 |
| SiO2 | 103.5 | Au 4f / 83.94 | 2 |
| SiC | 100.5 | Au 4f / 83.8 | 3 |
| SiN | 102 | ||
| Silicone | 102.4 |
Silicon 2s peaks are also relatively large, and may be of use where Si 2p overlaps with another emission (Figure 2).
References
- Data acquired by HarwellXPS
- Jensen, D. S., et al. (2013). “Silicon (100)/SiO2 by XPS.” Surface Science Spectra 20(1): 36-42. Read it online here.
- Miyoshi, K. and D. H. Buckley (1982). “XPS, AES and friction studies of single-crystal silicon carbide.” Applications of Surface Science 10(3): 357-376.. Read it online here.
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